 MEMORY存储芯片MT29F32G08AFABAWPB中文规格书
 MEMORY存储芯片MT29F32G08AFABAWPB中文规格书
                        
                    
                    
                    
                    
                    
                    摘要:GeneralDescriptionMicronNANDFlashdevicesincludeanasynchronousdatainterfaceforhigh-performanceI/Ooperations.Thesedevicesuseahighlymultiplexed8-bitbus(I/Ox)totransfercommands,address,anddata.Therearefivecontrolsignalsusedtoimplementtheasynchronousdatainterface:CE#,CLE,ALE,WE#,andRE#.Additionalsignalscontrolhardwarewriteprotectionandmonitordevicestatus(R/B#).Thishardwareinterfacecreatesalowpin-countdevicewithastandardpinoutthatremainsthesamefromonedensitytoanother,enablingfutureupgradestohigherdensitieswithnoboardredesign.Atargetistheunitofmemoryaccessedbyachipenablesignal.AtargetcontainsoneormoreNANDFlashdie.ANANDFlashdieistheminimumunitthatcanindependentlyexecutecommandsandreports
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